ShenzhenYijiajie Electronic Co., Ltd.

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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

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ShenzhenYijiajie Electronic Co., Ltd.
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City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissXu
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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

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Brand Name :Hamamatsu
Model Number :S1226-8BQ
Place of Origin :Japan
MOQ :1
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :3000/pcs/pre
Delivery Time :3-5work days
Packaging Details :In a box
Price :Negotiable
photographic area is :5.8 × 5.8mm
Number of pixels :1
Refrigeration and :Non - cooled
Encapsulated :Metal
encapsulation type is :TO-8
Reverse voltage (max) :5V
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Product Description:

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Features:

● High UV sensitivity: QE = 75% (λ=200 nm)

● Suppress NIR sensitivity

● Low dark current

● High reliability

Dark current (maximum) 20 pA

Rise time (typical value). 2 mu s

Junction capacitance (typical value) 1200 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Reverse voltage (Max.) 5V
spectral response range is 190 to 1000 nm
peak sensitivity wavelength (typical value) was 720 nm
Type infrared photoelectricity

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

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