ShenzhenYijiajie Electronic Co., Ltd.

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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

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ShenzhenYijiajie Electronic Co., Ltd.
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City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissXu
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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

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Brand Name :Hamamatsu
Model Number :S1337-1010BQ
Place of Origin :Japan
MOQ :1
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :1000pcs/Month
Delivery Time :3-5work days
Packaging Details :Standard Packing
Price :Negotiable
photographic area is :10 × 10 mm
Number of pixels :1
Refrigeration and :Non - cooled
Encapsulated :Ceramic
Reverse voltage (Max.) :5 V
spectral response range is190 to 1100 :190 to 1100 nm
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Product Description:

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Features:

Suitable for precise photometric determination from ultraviolet to red band

Product features

High UV sensitivity: QE = 75% (λ=200 nm)

Low capacitance

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.5 A/W
Dark current (maximum) 200 pA
Rise time (typical value) 3 mu s
Junction capacitance (typical value)

1100 pF

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low CapacitanceS1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

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