ShenzhenYijiajie Electronic Co., Ltd.
The company advocates the corporate culture of "integrity and dedication, pragmatic innovation, unity and cooperation, diligence and progress", pays attention to standardized management, advocates
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Product Description:
S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current
Features:
Large area high speed silicon PIN photodiode
The S2387-66R has a large photosensitive area, but has excellent frequency response at 40 MHz. This diode is suitable for FSO(free space Optics) and high speed pulsed light detection.
Product features
Photosensitive area: φ5.0mm
Cut-off frequency: 40 MHz (VR=24 V)
High reliability: TO-8 metal package
Measurement conditions Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=24 V, Cutoff frequency: VR=24 V, Terminal capacitance: VR=24 V, F =1 MHz, λ=λp, Noise equivalent power: VR=24 V, λ=λp, unless otherwise noted
Specifications:
| Peak sensitivity wavelength (typical value) | 920 nm |
| Sensitivity (typical value) | 0.58 A/W |
| Dark current (maximum) | 4300pA |
| Rise time (typical value) | 18 mu s |
| Junction capacitance (typical value) | 40 pF
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