ShenzhenYijiajie Electronic Co., Ltd.

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S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

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ShenzhenYijiajie Electronic Co., Ltd.
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City:shenzhen
Province/State:guangdong
Country/Region:china
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S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

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Brand Name :Hamamatsu
Model Number :S2386-8K
Place of Origin :Japan
MOQ :1
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :3000/pcs/month
Delivery Time :3-5work days
Packaging Details :Tube
Price :Negotiable
photographic area is :5.8 × 5.8mm
Number of pixels :1
Refrigeration and :Non - cooled
encapsulation type is :to-8
Reverse voltage (Max.) :30V
Spectral response range :320 to 1100 nm
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Product Description:

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

Features:

Suitable for visible light to near infrared band, universal photometric determination

Product features

● High sensitivity in visible to near infrared band

● Low dark current

● High reliability

● High linearity

Rise time (typical value). 10 mu s

Junction capacitance (typical value) 4300 pF

Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

spectral response range is 320 to 1100 nm
Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.6 A/W
Dark current (Max.) 50 pA

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

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