ShenzhenYijiajie Electronic Co., Ltd.
The company advocates the corporate culture of "integrity and dedication, pragmatic innovation, unity and cooperation, diligence and progress", pays attention to standardized management, advocates
Add to Cart
Product Description:
GT-UV400-L GaN UV Sensor For UV Photocatalytic Monitoring
Features:
General Features: l Indium Gallium Nitride Based Material l Photovoltaic mode operation l TO-46 metal housing l High responsivity and low dark current Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing Specifications: Parameters Symbol Value Unit Maximum ratings Operation temperature range Topt -25-85 oC Storage temperature range Tsto -40-85 oC Soldering temperature (3 s) Tsol 260 oC Reverse voltage Vr-max -10 V General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -5 V) Id
<1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF >
Specifications:
| Wavelength of peak responsivisity | λ p 375 nm |
| Peak responsivisity (at 385 nm) | Rmax 0.243 A/W |
| Spectral response range (R=0.1×Rmax) | 200-400 nm |
| UV-visible rejection ratio (Rmax/R450 nm) | - >104 - |
