ShenzhenYijiajie Electronic Co., Ltd.
The company advocates the corporate culture of "integrity and dedication, pragmatic innovation, unity and cooperation, diligence and progress", pays attention to standardized management, advocates
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Product Description:
GS-UVV-3535LCW InGaN-based UV Photodiode UV LED Monitoring UV Radiation Dose Measurement UV Curing
Features:
General Features:
l Indium Gallium Nitride Based Material
l Photovoltaic mode operation
l SMD 3535 ceramic package with quartz window
l High responsivity and low dark current
Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing
Parameters Symbol Value Unit Maximum ratings
Operation temperature range Topt -25-85 oC
Storage temperature range Tsto -40-85 oC
Soldering temperature (3 s) Tsol 260 oC
Reverse voltage Vr-max -10 V
General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -1 V) Id <1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF> <1 nA Temperature coefficient Tc 0.065 %/ oC Capacitance (at 0 V and 1 MHz) Cp 1.7 pF>
<1 nA Temperature coefficient (@265 nm) Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 18 p>
Specifications:
| Wavelength of peak responsivisity | λ p 390 nm |
| Peak responsivisity (at 385 nm) | Rmax 0.289 A/W |
| Spectral response range (R=0.1×Rmax) | 290-440 nm |
| UV-visible rejection ratio (Rmax/R450 nm) | - >10 - |
