ShenzhenYijiajie Electronic Co., Ltd.

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S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

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ShenzhenYijiajie Electronic Co., Ltd.
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City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissXu
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S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

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Model Number :S12060-02
Place of Origin :China
MOQ :1
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :1000
Delivery Time :5-8workingdays
Packaging Details :Standard Packing
Type :Near Infrared (low temperature coefficient)
Light-receiving surface :φ0.2 mm
package :Metal
Package category :TO-18
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S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 nm Band

Features:

Temperature coefficient of breakdown voltage:
0.4 V/°C
High-speed response
High sensitivity and low noise

Applications:

Optical rangefinders
FSO
Optical fi ber communications

Datasheet:

Maximum sensitivity wavelength (typical) 800 nm
Sensitivity wavelength range 400 to 1000 nm
Photosensitivity (Typical) 0.5 A/W
Dark current (maximum) 0.5 nA
Cutoff Frequency (Typical) 1000 MHz
Junction capacitance (typical) 1.5 pF
Breakdown voltage (typical) 200 V
Temperature coefficient of breakdown voltage (typ.) 0.4 V/°C
Gain ratio (typical value) 100

S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

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