ShenzhenYijiajie Electronic Co., Ltd.

The company advocates the corporate culture of "integrity and dedication, pragmatic innovation, unity and cooperation, diligence and progress", pays attention to standardized management, advocates

Manufacturer from China
Verified Supplier
4 Years
Home / Products / UV Photodiode Sensor /

S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

Contact Now
ShenzhenYijiajie Electronic Co., Ltd.
Visit Website
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissXu
Contact Now

S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

Ask Latest Price
Video Channel
Brand Name :Hamamatsu
Model Number :S1337-33BQ
Place of Origin :Japan
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Delivery Time :3-5workingdays
Packaging Details :Standard Package
MOQ :1
Supply Ability :3000/pcs/month
Photosensitive area :2.4 × 2.4 mm
Package :Ceramic
Cooling :Non-cooled
Reverse voltage (max.) :5 V
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

These Si photodiodes have sensitivity in the Uv to near IR range. They are suitable for low-light-level detection in analysis
and the like.

Features
High uv sensitivity:QE75%(=200 nm)
Low capacitance

Applications
Analytical equipment
Optical measurement eguipment

Specification:

Spectral response range
190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 30 pA
Rise time (typ.) 0.2 μs
Terminal capacitance (typ.) 65 pF
Noise equivalent power (typ.) 8.1×10-15 W/Hz1/2


Inquiry Cart 0