ShenzhenYijiajie Electronic Co., Ltd.
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Product Description:
S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
Features:
Detailed parameter
Receiving surface 10 × 10 mm
Encapsulated ceramics
Package category --
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.36A /W
Dark current (Max.) 50 pA
Rise time (typical value) 7 μs
Junction capacitance (typical value) 3000 pF
Noise equivalent power (typical value) 8.0×10-15 W/Hz1/2
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 720 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Spectral response range | 190 to 1100 nm |
| Maximum sensitivity wavelength (typical value) | 960 nm |
| Photosensitivity (typical value) | 0.5A /W |
| Dark current (Max.) | 20 pA |
