ShenzhenYijiajie Electronic Co., Ltd.
The company advocates the corporate culture of "integrity and dedication, pragmatic innovation, unity and cooperation, diligence and progress", pays attention to standardized management, advocates
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Product Description:
S1226-44BQ High UV Sensitivity Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light
Features:
Suitable for precision photometry in ultraviolet to visible wavelengths; Suppress near infrared sensitivity
peculiarity
- High UV sensitivity: QE = 75% (λ = 200 nm)
- Suppress near infrared sensitivity
- Low dark current
- High reliability
Receiving surface 3.6 × 3.6 mm
Encapsulation metal
Package category TO-5
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.36A /W
Dark current (Max.) 10 pA
Rise time (typical value) 1 μs
Junction capacitance (typical value) 500 pF
Noise equivalent power (typical value) 3.6×10-15 W/Hz1/2
Measurement conditions Ta = 25°C, typical value, sensitivity: λ = 720 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Spectral response range | 190 to 1000 nm |
| Maximum sensitivity wavelength | 720 nm |
| Photosensitivity (typical value) | 0.36A /W |
| Dark current (Max.) | 2 pA |
