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Product Description:
GT-ABC-L GaN-based UV photodiode UV index monitoring UV radiation dose measurement
Features:
General Features:
lBroad band UVA+UVB+UVC photodiode
lPhotovoltaic mode operation
lTO-46metal housing
lGood visible blindness
lHigh responsivity and low dark current
Applications:UV index monitoring, UV radiation dose measurement, flame detection
Specifications:Parameters | Symbol | Value | Unit |
Maximum ratings | |||
Operation temperature range | Topt | -25-85 | oC |
Storage temperature range | Tsto | -40-85 | oC |
Soldering temperature (3 s) | Tsol | 260 | oC |
Reverse voltage | Vr-max | -10 | V |
General characteristics (25 oC) | |||
Chip size | A | 1 | mm2 |
Dark current (Vr = -1 V) | Id | <1 | nA |
Temperature coefficient (@265 nm) | Tc | 0.05 | %/ oC |
Capacitance (at 0 V and 1 MHz) | Cp | 18 | pF |
Spectral response characteristics (25 oC) | |||
Wavelength of peak responsivity | λ p | 355 | nm |
Peak responsivity (at 355 nm) | Rmax | 0.20 | A/W |
Spectral response range (R=0.1×Rmax) | - | 210-370 | nm |
UV-visible rejection ratio (Rmax/R400 nm) | - | >104 | - |
Specifications:
Peak wavelength | 565 nm |
If - Forward current | 50 mA |
Length | 9.1mm |
Encapsulation | Bulk |