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Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band

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City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissXu
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Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band

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Model Number :S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K
Place of Origin :Japan
MOQ :1
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :5000pcs
Delivery Time :3-5work days
Packaging Details :Paper box
Light-receiving side :3.6 × 3.6 mm
encapsulation :metal
Package Category :TO-5
refrigeration :Non-cooled
Reverse voltage (max) :30 V
Spectral response range :320 to 1100 nm
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Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2683-18K High Sensitivity In The Near-infrared Band

Silicon photodiodes S2386-44K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Dark current (max) 20 pA
Rise Time (Typical) 3.6 μs
Junction Capacitance (typical) 1600 pF
Noise equivalent power (typical) 1.4×10-15 W/Hz1/2

Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band

Silicon photodiodes S2386-5K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Light-receiving side 2.4 × 2.4 mm
encapsulation metal
Package Category TO-5
refrigeration Non-cooled
Reverse voltage (max) 30 V
Spectral response range 320 to 1100 nm

Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band

Silicon photodiodes S2386-45K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Light-receiving side 3.9 × 4.6 mm
encapsulation metal
Dark current (max) 30 pA
Rise Time (Typical) 5.5 μs
Junction Capacitance (typical) 2300 pF
Noise equivalent power (typical) 1.4×10-15 W/Hz1/2

Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band

Silicon photodiodes S2386-8K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Light-receiving side 5.8 × 5.8 mm
encapsulation metal
Package Category TO-8
Reverse voltage (max) 30 V
Spectral response range 320 to 1100 nm
Dark current (max) 50pA

Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band

Silicon photodiodes S2386-18K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Light-receiving side 1.1 × 1.1 mm
encapsulation metal
Package Category TO-18
Reverse voltage (max) 30 V
Spectral response range 320 to 1100 nm
Dark current (max) 2 pA

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