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Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2683-18K High Sensitivity In The Near-infrared Band
Silicon photodiodes S2386-44K
Suitable for visible to near-infrared, universal photometer
Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity
Dark current (max) | 20 pA |
Rise Time (Typical) | 3.6 μs |
Junction Capacitance (typical) | 1600 pF |
Noise equivalent power (typical) | 1.4×10-15 W/Hz1/2 |
Silicon photodiodes S2386-5K
Suitable for visible to near-infrared, universal photometer
Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity
Light-receiving side | 2.4 × 2.4 mm |
encapsulation | metal |
Package Category | TO-5 |
refrigeration | Non-cooled |
Reverse voltage (max) | 30 V |
Spectral response range | 320 to 1100 nm |
Silicon photodiodes S2386-45K
Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity
Light-receiving side | 3.9 × 4.6 mm |
encapsulation | metal |
Dark current (max) | 30 pA |
Rise Time (Typical) | 5.5 μs |
Junction Capacitance (typical) | 2300 pF |
Noise equivalent power (typical) | 1.4×10-15 W/Hz1/2 |
Silicon photodiodes S2386-8K
Suitable for visible to near-infrared, universal photometer
Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity
Light-receiving side | 5.8 × 5.8 mm |
encapsulation | metal |
Package Category | TO-8 |
Reverse voltage (max) | 30 V |
Spectral response range | 320 to 1100 nm |
Dark current (max) | 50pA |
Silicon photodiodes S2386-18K
Suitable for visible to near-infrared, universal photometer
Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity
Light-receiving side | 1.1 × 1.1 mm |
encapsulation | metal |
Package Category | TO-18 |
Reverse voltage (max) | 30 V |
Spectral response range | 320 to 1100 nm |
Dark current (max) | 2 pA |