S8745-01 Infrared Photoelectric Sensor For Precision Analytical Instruments Industrial Measuring Equipment
1. Application Areas:
- Precision Analytical Instruments: Used in devices like ultraviolet (UV) - near - infrared (NIR) spectrometers, chromatographs, and photometers for weak light signal detection. It enables accurate measurement of light absorption, emission, or transmission across the UV - NIR spectrum, supporting quantitative analysis in fields such as chemistry, biology, and environmental science.
- Industrial Measuring Equipment: Integrated into industrial sensors for monitoring parameters like film thickness, surface reflectivity, or material composition. Its low noise and high sensitivity allow for precise detection of subtle light variations, ensuring quality control in manufacturing processes (e.g., semiconductor wafer inspection, coating thickness measurement).
- Medical Diagnostic Devices: Applied in medical equipment such as immunoassays, clinical chemistry analyzers, or non - invasive blood glucose monitors. It can detect weak optical signals from biochemical reactions, enabling the accurate quantification of biomarkers or other analytes for disease diagnosis and health monitoring.
- Environmental Monitoring Instruments: Utilized in devices for measuring air quality (e.g., detecting trace gases via optical absorption), water quality (e.g., analyzing pollutant concentrations), or solar radiation. Its broad spectral response (190–1100 nm) and low Noise Equivalent Power (NEP) make it suitable for capturing weak environmental light signals.
- Aerospace & Scientific Research: Employed in aerospace sensors for space radiation detection or atmospheric remote sensing, as well as in laboratory research setups for studying light - matter interactions, quantum optics, or low - light physics experiments.
2. Key Features:
- Broad Spectral Response: Covers a wide wavelength range of 190–1100 nm (ultraviolet to near - infrared), making it versatile for applications requiring detection across multiple optical bands.
- Ultra - Low Noise Performance: Features a typical Noise Equivalent Power (NEP) of 11×10−15W/Hz1/2, minimizing background noise and ensuring high signal - to - noise ratio (SNR) for weak light detection.
- Integrated High - Performance Components: Comes with a built - in feedback resistor (RF=1GΩ) and capacitor (CF=5pF), as well as a low - power FET input operational amplifier. This integration simplifies circuit design, reduces external component count, and ensures stable signal amplification.
- Compact & Shielded Package: Housed in a small TO - 5 metal package with a quartz window. The metal package provides effective electromagnetic compatibility (EMC) shielding, while the quartz window offers high transmittance across the sensor’s spectral range—ideal for space - constrained applications.
- High EMC Noise Resistance: The light - sensitive surface is connected to the GND terminal, enhancing resistance to electromagnetic interference (EMI). This ensures reliable performance in noisy industrial or electronic environments.
- Flexible Gain Adjustment: Variable gain can be achieved by adding an external resistor, allowing users to tailor the sensor’s output to specific application requirements (e.g., adjusting sensitivity for different light intensity ranges).
- Large Photosensitive Area: Boasts a 2.4×2.4 mm photosensitive area, increasing light collection efficiency and improving detection accuracy for scattered or low - intensity light sources.
Part Number | S8745-01 |
Sensor Type | Integrated Photodiode with Op-Amp (Infrared & UV-NIR Compatible) |
Manufacturer | Hamamatsu Photonics (Typical Supplier) |
Package Type | TO-5 Metal Package |
Window Material | Quartz (High transmittance for UV-NIR) |
Photosensitive Area | 2.4 × 2.4 mm |
Integrated Components | - Built-in feedback resistor (RF): 1 GΩ - Built-in feedback capacitor (CF): 5 pF - Low-power FET input operational amplifier |
Spectral Response Range | 190 – 1100 nm |
Peak Sensitivity Wavelength (λp) | Typ. 960 nm |
Noise Equivalent Power (NEP) | Typ. 11×10−15 W/Hz¹/² |
Maximum Reverse Voltage (VR(max)) | 20 V |
Operating Temperature Range | -10℃ – 60℃ |
Storage Temperature Range | -40℃ – 85℃ |
Input Bias Current (Op-Amp) | Typ. 1 pA |
Power Supply Voltage Range | ±5 V – ±15 V (Dual Supply) |
Power Consumption | Typ. 3 mW |
Electromagnetic Compatibility (EMC) | High EMC Noise Resistance |
Gain Adjustment | Variable (via external resistor) |
Output Type | Analog Voltage (Amplified Signal) |
